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E2I0023-17-Y1 Semiconductor
Semiconductor MSM52258
32,768-Word 8-Bit CMOS STATIC RAM
This version: MSM52258 Jan. 1998 Previous version: Aug. 1996
DESCRIPTION
The MSM52258 is a 32,768-word by 8-bit CMOS fast static RAM featuring a single 5 V power supply operation and direct TTL input/output compatibility. Since the circuitry is completely static, external clock and refreshing operations are unnecessary, making this device very easy to use. The MSM52258 uses NMOS cells and CMOS peripherals and provides high-speed operation at 15 ns access time. Since the MSM52258 is provided with the CS and OE signals, it can connect with outputs of other chips in a wired OR technique, which provides easy memory expansion and bus line control.
FEATURES
* 32,768-word 8-bit configuration * Single 5 V power supply * Fully static operation * Operating temperature range: Ta = 0C to 70C * Low power dissipation Standby: 1 mA (Max.) Operation: - 15 170 mA (Max.) - 17 165 mA (Max.) - 20 160 mA (Max.) * Access time: - 15 15 ns (Max.) - 17 17 ns (Max.) - 20 20 ns (Max.) * (Input/Output) TTL compatible * 3-state output * Data retention available at power supply voltage 2 V * Package: 28-pin 300 mil plastic SOJ (SOJ28-P-300-1.27)
(Product : MSM52258-xxJS) xx indicates speed rank.
PRODUCT FAMILY
Family MSM52258-15 MSM52258-17 MSM52258-20 Access Time (Max.) 15 ns 17 ns 20 ns Package 300 mil 28-pin SOJ
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Semiconductor
PIN CONFIGURATION (TOP VIEW)
A14 1 A12 2 A7 3 A6 4 A5 5 A4 6 A3 7 A2 8
A1 9 A0 10 I/O1 11 I/O2 12 I/O3 13 VSS 14

28-Pin Plastic SOJ
MSM52258
28 VCC
27 WE 26 A13 25 A8 24 A9 23 A11 22 OE 21 A10 20 CS 19 I/O8 18 I/O7 17 I/O6 16 I/O5 15 I/O4
Pin Name A0 - A14 I/O1 - I/O8 CS WE OE VCC, VSS
Function Address Input Data Input/Output Chip Select Write Enable Output Enable Power Supply
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Semiconductor
MSM52258
BLOCK DIAGRAM
A6 A7 A8 A9 A10 A11 A12 A13 A14 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 I/O8 Input Data Control Column I/O Circuits Column Select
Row Select
Memory Array 512 Rows 64 Columns 8 Blocks
VCC VSS
A0 A1 A2 A3 A4 A5
CS WE OE
FUNCTION TABLE
Operating Mode Standby Read Cycle Write Cycle CS H L L L WE * H H L OE * H L * Operating Contents Output Floating Output Floating Data Read Data Write
*Don't Care ("H" or "L")
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Semiconductor
MSM52258
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter Power Supply Voltage Pin Voltage Power Dissipation Operating Temperature Storage Temperature Symbol VCC VT PD Topr Tstg Condition Ta = 25C, for VSS Ta = 25C -- -- Rating -0.3 to 7.0 -0.3* to VCC + 0.3 1.0 0 to 70 -55 to 125 Unit V V W C C
* -3.0 V Min. for pulse width less than 10 ns. Recommended Operating Conditions
Parameter Power Supply Voltage Input High Voltage Input Low Voltage Load Capacitance Symbol VCC VSS VIH VIL CL Condition -- VCC = 5 V 10% -- Min. 4.5 0 2.2 -0.3* -- Typ. 5 0 -- -- -- Max. 5.5 0 VCC + 0.3 0.8 30 Unit V V V V pF
* -3.0 V Min. for pulse width less than 10 ns. Capacitance
(Ta = 25C, f = 1 MHz) Parameter Input Capacitance Input/Output Capacitance Symbol CI CI/O Condition VI = 0 V VI/O = 0 V Min. -- -- Max. 6 8 Unit pF pF
Note:
This parameter is periodically sampled and not 100% tested.
4/11
Semiconductor DC Characteristics
MSM52258
(VCC = 5 V 10%, Ta = 0C to 70C) Parameter Input Leakage Current Input/Output Leakage Current Output High Voltage Output Low Voltage Standby Power Supply Current ICCS1 Operating Power Supply Current ICCA Symbol ILI ILO VOH VOL ICCS Condition VI = 0 to VCC CS = VIH or OE = VIH, VI/O = 0 to VCC IOH = -4 mA IOL = 8 mA CS VCC - 0.2 V, VI 0.2 V or VI VCC - 0.2 V CS = VIH, Min. cycle Min. cycle, IOUT = 0 mA Min. -10 -10 2.4 -- -- -- -- MSM52258 Typ. Max. -- -- -- -- -- -- -- 10 10 -- 0.4 1 20 q Unit mA mA V V mA mA mA 170 mA 165 mA 160 mA
q 52258-15 52258-17 52258-20
AC Characteristics Test Conditions
Parameter Input Pulse Level Input Rise and Fall Times Input/Output Timing Level Output Load Condition VIH = 3.0 V, VIL = 0.0 V 3 ns 1.5 V See Figures
5V 480 W DOUT
255 W
5V 480 W DOUT
255 W
30 pF (Including scope and jig)
5 pF (Including scope and jig)
Figure 1 Output Load
Figure 2 Output Load (tOLZ, tCLZ, tOHZ, tCHZ, tWLZ, tWHZ)
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Semiconductor Read Cycle
MSM52258
(VCC = 5 V 10%, Ta = 0C to 70C) MSM52258-15 Parameter Read Cycle Time Address Access Time CS Access Time OE Access Time CS to Output in Low-Z OE to Output in Low-Z Output Hold Time from Address Change CS to Output in High-Z OE to Output in High-Z Symbol tRC tAA tCO tOE tCLZ tOLZ tOH tCHZ tOHZ Min. 15 -- -- -- 3 0 3 -- -- Max. -- 15 15 8 -- -- -- 7 7 MSM52258-17 Min. 17 -- -- -- 3 0 3 -- -- Max. -- 17 17 9 -- -- -- 7 7 MSM52258-20 Min. 20 -- -- -- 3 0 3 -- -- Max. -- 20 20 10 -- -- -- 8 8 Unit ns ns ns ns ns ns ns ns ns
Address Controlled Read (WE = H, CS = L, OE = L)
tRC ADDRESS tAA tOH DOUT Dataout Valid
6/11
, ,
Semiconductor CS, OE Controlled Read (WE = H)
tRC ADDRESS tAA tCHZ CS tCO tCLZ OE tOE tOHZ DOUT Dataout Valid tOLZ tOH
MSM52258
Notes :
1. A read cycle occurs during the overlap of CS = "L", OE = "L" and WE = "H". 2. tCHZ and tOHZ are specified by the time when DATA is floating, not defined by the output level.
7/11
Semiconductor Write Cycle
MSM52258-15 Parameter Write Cycle Time Address Setup Time Write Pulse Width Write Recovery Time Data Setup Time Data Hold Time WE to Output in High-Z CS to End of Write Symbol tWC tAS tWP tWR tDS tDH tWHZ tCW tAW Min. 15 0 12 0 7 0 -- 12 0 Max. -- -- -- -- -- -- 7 --
MSM52258
(VCC = 5 V 10%, Ta = 0C to 70C) MSM52258-17 Min. 17 0 13 0 8 0 -- 13 0 Max. -- -- -- -- -- -- 7 -- MSM52258-20 Min. 20 0 15 0 10 0 -- 15 0 Max. -- -- -- -- -- -- 8 -- Unit ns ns ns ns ns ns ns ns
, ,
Address Valid to End of Write 12 -- 13 -- 15 -- ns Output Active from End of Write tWLZ -- -- -- ns
WE Controlled Write (OE = L)
tWC
ADDRESS
tCW
CS
tAW
WE
tAS
tWR
tWP
tWLZ
DOUT
tDS
tDH
tWHZ
DIN
Data In
8/11
Semiconductor CS Controlled Write (OE = H)
tWC ADDRESS tAS CS tCW
MSM52258
WE
DIN
DOUT
Notes:

tAW tWR tWP tDS tDH Data In High Impedance
A write cycle occurs during the overlap of CS = "L" and WE = "L". OE may be either of "H" or "L" in the write cycle. tAS is specified from CS = "L" or WE = "L", whichever occurs last. tWP is an overlap time of CS = "L" and WE = "L". tWR, tDS and tDH are specified from CS = "H" or WE = "H", whichever occurs first. tWHZ is specified by the time when DATA output is floating, not defined by the output level. 7. When I/O pins are in the output mode, don't apply the inverted input signal to the output pins. 1. 2. 3. 4. 5. 6.
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Semiconductor
MSM52258
Data Retention Characteristics
Parameter Data Retention Power Supply Voltage Data Retention Power Supply Current Chip Deselect to Data Retention Time Operation Recovery Time Symbol VCCH ICCH tCDR tR Condition CS VCC - 0.2 V VCC = 3 V, CS VCC - 0.2 V -- -- Min. 2.0 -- 0 5 Typ. -- -- -- --
(Ta = 0C to 70C) Max. -- 500 -- -- Unit V mA ns ms
tCDR VCC 4.5 V VIH VCCH CS 0V
Standby mode
tR
CS VCC - 0.2 V
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Semiconductor
MSM52258
PACKAGE DIMENSIONS
(Unit : mm)
SOJ28-P-300-1.27
Mirror finish
Package material Lead frame material Pin treatment Solder plate thickness Package weight (g)
Epoxy resin Cu alloy Solder plating 5 mm or more 0.80 TYP.
Notes for Mounting the Surface Mount Type Package The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which are very susceptible to heat in reflow mounting and humidity absorbed in storage. Therefore, before you perform reflow mounting, contact Oki's responsible sales person for the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times).
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